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Effects of Post-Deposition Annealing Atmosphere and Duration on Sol-Gel Derived Amorphous Indium-Zinc-Oxide Thin Film Transistors

机译：后沉积退火气氛和持续时间对溶胶 - 凝胶衍生非晶铟 - 氧化锌薄膜晶体管的影响

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Wan-fang Chung A; Ting-chang Chang B; Hung-wei Li D; Tseung-yuen Tseng A; Hsiang Tai E;
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1. Performance enhancement of amorphous indium-zinc-oxide thin film transistors by microwave annealing [J] . Xu Rui, He Jian, Li Wei, Applied Surface Science . 2015,第DECa1PTaB期

机译：微波退火提高非晶铟锌氧化物薄膜晶体管的性能
2. Effects of annealing temperature and heat-treatment duration on electrical properties of sol-gel derived indium-tin-oxide thin films [J] . A. Beaurain, D. Luxembourg, C. Dufour, Thin Solid Films . 2008,第12期

机译：退火温度和热处理时间对溶胶-凝胶法氧化铟锡薄膜电性能的影响
3. Effects of excimer laser annealing on low-temperature solution based indium-zinc-oxide thin film transistor fabrication [J] . Chen Chao-Nan, Huang Jung-Jie Journal of Applied Research and Technology . 2015,第2期

机译：准分子激光退火对基于低温溶液的铟锌氧化物薄膜晶体管制造的影响
4. Effects of Post-Deposition Annealing Atmosphere and Duration on Sol-Gel Derived Amorphous Indium-Zinc-Oxide Thin Film Transistors [C] . Wan-Fang Chung, Ting-Chang Chang, Hung-Wei Li, State-of-the-art program on compound semiconductors 53 (SOTAPOCS 53) . 2011

机译：沉积后退火气氛和持续时间对溶胶-凝胶衍生的非晶铟锌氧化物薄膜晶体管的影响
5. Amorphous Metal Oxide Thin Films from Aqueous Precursors: New Routes to High-kappa Dielectrics, Impact of Annealing Atmosphere Humidity, and Elucidation of Non-Uniform Composition Profiles [D] . Woods, Keenan N. 2017

机译：水性前体的非晶态金属氧化物薄膜：高κ电介质的新途径，大气湿度退火的影响以及不均匀成分分布的阐明
6. Highly Responsive Blue Light Sensor with Amorphous Indium-Zinc-Oxide Thin-Film Transistor based Architecture [O] . Po Tsun Liu, Dun Bao Ruan, Xiu Yun Yeh, -1

机译：具有基于非晶铟锌氧化物薄膜晶体管的架构的高响应蓝光传感器
7. Effects of Post-Deposition Annealing Atmosphere and Duration on Sol-gel Derived Amorphous Indium-Zinc-Oxide Thin-Film Transistors [O] . 2011

机译：后沉积退火气氛和持续时间对溶胶 - 凝胶衍生非晶铟 - 氧化锌薄膜晶体管的影响

Effects of Post-Deposition Annealing Atmosphere and Duration on Sol-Gel Derived Amorphous Indium-Zinc-Oxide Thin Film Transistors

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